BGH BL3209S Manual De Servicio página 35

5
( DDR1 DRAM With Termination )
DDRV
MEM_DQ0
D
MEM_DQ1
MEM_DQ2
MEM_DQ3
MEM_DQ4
MEM_DQ5
MEM_DQ6
MEM_DQ7
MEM_DQS0
MEM_DQM0
MEM_WE#
MEM_CAS#
MEM_RAS#
MEM_CS#
MEM_BA0
MEM_BA1
MEM_ADDR10
MEM_ADDR0
MEM_ADDR1
MEM_ADDR2
MEM_ADDR3
C
DDRV
+ + CD5 CD5 + +
220uF/16v-LowESR CAP 220uF/16v-LowESR CAP
增加CD6
20080911
B
If use sdram CD34 CD26 CD27 RD9 CD28 CD29 CD30 UD2 NC
If use ddr CD34 CD26 CD27 RD9 CD28 CD29 CD30 UD2 ON
A
5
4
DDRV
U1 U1
1 66
VDD VSS
MEM_DQ15
2 65
DQ0 DQ15
3 64
VDDQ VSSQ
MEM_DQ14
4 63
DQ1 DQ14
MEM_DQ13
5 62
DQ2 DQ13
6 61
VSSQ VDDQ
MEM_DQ12
7 60
DQ3 DQ12
MEM_DQ11
8 59
DQ4 DQ11
9 58
VDDQ VSSQ
MEM_DQ10
10 57
DQ5 DQ10
MEM_DQ9
11 56
DQ6 DQ9
12 55
VSSQ VDDQ
MEM_DQ8
13 54
DQ7 DQ8
14 53
NC NC
15 52
VDDQ VSSQ
MEM_DQS1 MEM_VREF
16 51
LDQS UDQS
17 50
NC NC
MEM_VREF
18 49
VDD VREF
19 48
NC VSS
20 47 MEM_DQM1
LDM UDM
MEM_CLK0# CD1 CD1
21 46
WE CLK
MEM_CLK0
22 45 0.1uF 0.1uF
CAS CLK
MEM_CLKEN
23 44
RAS CKE
24 43
CS NC
MEM_ADDR12
25 42
NC A12
MEM_ADDR11
26 41
BS0 A11
MEM_ADDR9
27 40
BS1 A9
28 39 MEM_ADDR8
A10/AP A8
MEM_ADDR7
29 38
A0 A7
MEM_ADDR6
30 37
A1 A6
MEM_ADDR5
31 36
A2 A5
MEM_ADDR4
32 35
A3 A4
33 34
VDD VSS
16M x 16 DDR TSOP-66 16M x 16 DDR TSOP-66
R-TSOP66N-0.650-11.84-HX R-TSOP66N-0.650-11.84-HX
DDR1
CD6 CD6 CD7 CD7 CD8 CD8 CD9 CD9 CD10 CD10 CD11 CD11 CD12 CD12
100uF/16v 100uF/16v 4.7uF/10V 4.7uF/10V 0.1uF 0.1uF 0.1uF 0.1uF 0.1uF 0.1uF 0.1uF 0.1uF 3300pF 3300pF
LP2996 for Vref and VTT of DDR1
VTT
+ + CD34 CD34 CD27 CD27 CD30 CD30
100uF/16v 100uF/16v 10uF/10v 10uF/10v 0.01uF 0.01uF
RD9 RD9
U2 U2
DDRV
VTT
1
GND
MEM_VREF 2
RA140 RA140 SD
3
1K 1%/NS 1K 1%/NS VSENSE
MEM_VREF
4
VREF
IC LP2996 DDR Termination SOP-8 IC LP2996 DDR Termination SOP-8
C680 C680
R-SOIC08N-1.270-6.00-HX R-SOIC08N-1.270-6.00-HX
RA141 RA141 CD28 CD28
1K 1%/NS 1K 1%/NS
0.01uF 0.01uF
1uF 1uF
2008/05/08 MODIFY
4
3
增加FB31
20080911
FB31 FB31
0603/181 0603/181
CD32 CD32
4.7uF/10v 4.7uF/10v
add in 2008/06/02
+ + CD35 CD35 CD33 CD33
100uF/16v 100uF/16v 4.7uF/10v 4.7uF/10v
2008.6.4
CD13 CD13 CD14 CD14 CD15 CD15
3300pF 3300pF 3300pF 3300pF 3300pF 3300pF
CD31 CD31
4.7uF/10v 4.7uF/10v
增加磁珠
DDRV
20080911
4.7K 4.7K
FB30 FB30
0603/181 0603/181
8
VTT
7
PVIN
6
AVIN
5
VDDQ
+ + CD36 CD36
CD37 CD37
100uF/16v 100uF/16v
0.1uF 0.1uF
3
2
VTT
RND10 RND10 MEM_DQ0 RND1 RND1 RDQ0
5 4 5 4
6 3 MEM_DQ1 6 3 RDQ1
MEM_DQ2 RDQ2
7 2 7 2
CD17 CD17 MEM_DQ3 RDQ3
8 1 8 1
150x4 150x4 22x4 22x4
0.1uF 0.1uF
R-RESCA3216-8N-HX R-RESCA3216-8N-HX R-RESCA2010-8N-HX R-RESCA2010-8N-HX
RND11 RND11 MEM_DQ4 RND2 RND2 RDQ4
5 4 5 4
MEM_DQ5 RDQ5
6 3 6 3
7 2 MEM_DQ6 7 2 RDQ6
CD18 CD18 MEM_DQ7 RDQ7
8 1 8 1
150x4 150x4 22x4 22x4
3300pF 3300pF
R-RESCA3216-8N-HX R-RESCA3216-8N-HX R-RESCA2010-8N-HX R-RESCA2010-8N-HX
150 150 RD10 RD10 MEM_DQS0 22 22 RD1 RD1 RDQS0
150 150 RD11 RD11 MEM_DQM0 22 22 RD2 RD2 RDQM0
150 150 RD12 RD12 MEM_DQM1 22 22 RD3 RD3 RDQM1
CD19 CD19 150 150 RD13 RD13 MEM_DQS1 22 22 RD4 RD4 RDQS1
0.1uF 0.1uF
RND13 RND13 MEM_DQ8 RND3 RND3 RDQ8
5 4 5 4
MEM_DQ9 RDQ9
6 3 6 3
7 2 MEM_DQ10 7 2 RDQ10
CD21 CD21 MEM_DQ11 RDQ11
8 1 8 1
150x4 150x4 22x4 22x4
3300pF 3300pF
R-RESCA3216-8N-HX R-RESCA3216-8N-HX R-RESCA2010-8N-HX R-RESCA2010-8N-HX
RND14 RND14 MEM_DQ12 RND4 RND4 RDQ12
5 4 5 4
MEM_DQ13 RDQ13
6 3 6 3
MEM_DQ14 RDQ14
7 2 7 2
CD20 CD20 8 1 MEM_DQ15 8 1 RDQ15
150x4 150x4 22x4 22x4
0.1uF 0.1uF
R-RESCA3216-8N-HX R-RESCA3216-8N-HX R-RESCA2010-8N-HX R-RESCA2010-8N-HX
RND15 RND15 MEM_WE# RND5 RND5 RWE#
5 4 5 4
MEM_CAS# RCAS#
6 3 6 3
MEM_RAS# RRAS#
7 2 7 2
CD22 CD22
8 1 8 1
150x4 150x4 22x4 22x4
3300pF 3300pF
R-RESCA3216-8N-HX R-RESCA3216-8N-HX R-RESCA2010-8N-HX R-RESCA2010-8N-HX
5 RND16 RND16 4 MEM_CS# 5 RND6 RND6 4 RCS#
MEM_BA0 RBA0
6 3 6 3
MEM_BA1 RBA1
7 2 7 2
CD23 CD23 MEM_ADDR10 RA10
8 1 8 1
150x4 150x4 22x4 22x4
0.1uF 0.1uF
R-RESCA3216-8N-HX R-RESCA3216-8N-HX R-RESCA2010-8N-HX R-RESCA2010-8N-HX
RND17 RND17 MEM_ADDR4 RND7 RND7 RA4
5 4 4 5
6 3 MEM_ADDR5 3 6 RA5
MEM_ADDR6 RA6
7 2 2 7
CD25 CD25 MEM_ADDR7 RA7
8 1 1 8
3300pF 3300pF 150x4 150x4 22x4 22x4
R-RESCA3216-8N-HX R-RESCA3216-8N-HX R-RESCA2010-8N-HX R-RESCA2010-8N-HX
RND18 RND18 MEM_ADDR12 RND8 RND8 RA12
4 5 5 4
MEM_ADDR11 RA11
3 6 6 3
MEM_ADDR9 RA9
2 7 7 2
CD24 CD24 MEM_ADDR8 RA8
1 8 8 1
150x4 150x4 22x4 22x4
0.1uF 0.1uF
R-RESCA3216-8N-HX R-RESCA3216-8N-HX R-RESCA2010-8N-HX R-RESCA2010-8N-HX
RND19 RND19 MEM_ADDR0 RND9 RND9 RA0
5 4 5 4
6 3 MEM_ADDR1 6 3 RA1
MEM_ADDR2 RA2
7 2 7 2
CD26 CD26 MEM_ADDR3 RA3
8 1 8 1
150x4 150x4 22x4 22x4
3300pF 3300pF
R-RESCA3216-8N-HX R-RESCA3216-8N-HX R-RESCA2010-8N-HX R-RESCA2010-8N-HX
MEM_CLK0 RD6 RD6 22 22 RCLK0
RD7 RD7
100 100
If use SDRAM NC RD7/RD8
MEM_CLK0# RD8 RD8 22 22 RCLK0#
MEM_CLKEN RD5 RD5 22 22 RCKE
MediaTek (ShenZhen) Inc. MediaTek (ShenZhen) Inc. MediaTek (ShenZhen) Inc.
Title Title Title
Size Size Size
C C C
Date: Date: Date:
2
1
RDQS0
RDQS0 3
RDQS1
RDQS1 3
RDQM0
RDQM0 3
RDQM1
RDQM1 3
RWE#
RWE# 3
RCAS#
RCAS# 3
RRAS#
RRAS# 3
RCS#
RCS# 3
RCKE
RCKE 3
RDQ[15..0]
RDQ[15..0] 3
RA[12..0]
RA[12..0] 3
D
RCLK0
RCLK0 3
RCLK0#
RCLK0# 3
RBA0
RBA0 3
RBA1
RBA1 3
MEM_VREF
MEM_VREF 3
DDRV
DDRV 2,3,4
GND
GND 2,3,4,6,7,8,9,10,11,12,13,14
C
B
A
MediaTek Confidential MediaTek Confidential MediaTek Confidential
DDR1 DRAM
Rev Rev Rev
Document Number Document Number Document Number
Drawn: Drawn: Drawn: 1 1 1
Jiu.Ni
2008/1/25 Sheet Sheet Sheet 5 5 5 of of of 14 14 14
1